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Capteur de pression piezoélectrique et son application cryogénique à la mesure de pression de l'hélium superfluide lors de la transition d'un aimant.

Piezo-resistive pressure sensor and its cryogenic use for pressure measurement of superfluid helium at magnet quench.

Auteurs : HARUYAMA T., KIMURA N., NAKAMOTO T.

Résumé

A commercially available silicon pressure sensor is investigated for use in situ pressure measurement in a pressurized superfluid helium environment (FPS51B sensor). The sensor was set in the specific cryostat which can provide a pressurized superfluid helium environment. Cryostat pressure was changed from 0 to about 170 kilopascals at superfluid helium temperature. The output voltage of the sensor changed linearly in proportion to the applied pressure change. Its performance was not changed after being subjected to several thermal cycles between 300 K and 2 K.

Détails

  • Titre original : Piezo-resistive pressure sensor and its cryogenic use for pressure measurement of superfluid helium at magnet quench.
  • Identifiant de la fiche : 2000-0577
  • Langues : Anglais
  • Source : Cryogenics and refrigeration. Proceedings of ICCR '98.
  • Date d'édition : 21/04/1998
  • Document disponible en consultation à la bibliothèque du siège de l'IIF uniquement.

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