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Transistor HEMT pseudomorphique comme élément du circuit sur les amplificateurs de nanopuissance à haute impédance dans les applications ultra basses températures

PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application.

Auteurs : KOROLEV A. M., SHULGA V. M., GRITSENKO I. A., et al.

Type d'article : Article

Résumé

In this work, high electron mobility transistor (HEMT) was studied as a circuit element for amplifiers operating at temperatures of the order of 10–100 mK. To characterize the HEMT, the relative parameters are proposed to be used. HEMT characteristics were measured at a temperature of 50 mK for the first time. It follows from the reported studies that the power consumption of high-impedance HEMT-based amplifiers can be reduced down to hundreds of nanowatt or even lower.

Détails

  • Titre original : PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application.
  • Identifiant de la fiche : 30014457
  • Langues : Anglais
  • Source : Cryogenics - vol. 67
  • Date d'édition : 04/2015
  • DOI : http://dx.doi.org/10.1016/j.cryogenics.2015.01.003

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