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PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application.

Author(s) : KOROLEV A. M., SHULGA V. M., GRITSENKO I. A., et al.

Type of article: Article

Summary

In this work, high electron mobility transistor (HEMT) was studied as a circuit element for amplifiers operating at temperatures of the order of 10–100 mK. To characterize the HEMT, the relative parameters are proposed to be used. HEMT characteristics were measured at a temperature of 50 mK for the first time. It follows from the reported studies that the power consumption of high-impedance HEMT-based amplifiers can be reduced down to hundreds of nanowatt or even lower.

Details

  • Original title: PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application.
  • Record ID : 30014457
  • Languages: English
  • Source: Cryogenics - vol. 67
  • Publication date: 2015/04
  • DOI: http://dx.doi.org/10.1016/j.cryogenics.2015.01.003

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