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Influence of laser excitation on inverse proximity effect in BiOI/NB neterostructures.

Number: pap. n. 64

Author(s) : LOTNYK D., KOMANICKY V., BUNDA V., et al.

Summary

In recent years, the light-induced effects in superconductors have attracted intensive attention. The photosensitive bismuth oxyhalides semiconductors BiOX (X = Cl, Br and I) are promising substrates for sputtering due to their photosensitive properties and layered structure. In the current work, the superconductivity of 25 nm thick Nb films sputtered on the photosensitive semiconductors BiOI under laser irradiation was investigated. The resistive superconducting transitions were measured in the temperature range 5 K = T = 9 K. The shift of the superconducting transition temperature under laser excitation is in good agreement with the McMillan model which indicates the influence of the inverse proximity effect induced by the interface.

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Details

  • Original title: Influence of laser excitation on inverse proximity effect in BiOI/NB neterostructures.
  • Record ID : 30021754
  • Languages: English
  • Source: Cryogenics 2017. Proceedings of the 14th IIR International Conference: Dresden, Germany, Mai 15-19, 2017.
  • Publication date: 2017/05/15
  • DOI: http://dx.doi.org/10.18462/iir.cryo.2017.0064

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