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An experimental study of the transfer characteristic of a power MOSFET (metal-oxide-semiconductor field effect transistor) at room temperature and at liquid nitrogen temperature, is presented. The results show that the transfer characteristic is of the power square-law relation at both temperatures. This confirms the good potentiality of power MOSFET at low temperature.
Details
- Original title: Transfer power characteristic of a power MOSFET at liquid nitrogen temperature.
- Record ID : 1993-0078
- Languages: English
- Source: Indian J. pure appl. Phys. - vol. 29 - n. 5
- Publication date: 1991/05
- Document available for consultation in the library of the IIR headquarters only.
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A liquid nitrogen cooled sample stage for a sca...
- Author(s) : CHHATWAL H. L., GOSWAMI T. R.
- Date : 1992
- Languages : English
- Source: Cryogenics - vol. 32 - n. 7
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Propagation of prebreakdown discharges in liqui...
- Author(s) : YAMADA H., MATSUKAWA M., FUJIWARA T., et al.
- Date : 1991
- Languages : Japanese
- Source: Cryogenics/ Cryog. Eng. - vol. 26 - n. 5
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Characterization of a complementary metal-oxide...
- Author(s) : TODD-HASTINGS J., NG K. W.
- Date : 1995/06
- Languages : English
- Source: Rev. sci. Instrum. - vol. 66 - n. 6
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LIQUID NITROGEN COOLING IN A CMOS COMPUTER SYSTEM.
- Author(s) : CALLAGHER G. R., FARRELL J. A., COLONNA-ROMANO L. M.
- Date : 1991/08/10
- Languages : English
- Source: New challenges in refrigeration. Proceedings of the XVIIIth International Congress of Refrigeration, August 10-17, 1991, Montreal, Quebec, Canada.
- Formats : PDF
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Liquid nitrogen cooled sample stage for scannin...
- Author(s) : GERBER R., NISSEL T., WENER H. G., WILLMANN A., HUEBENER R. P., KOELLE D., GROSS R.
- Date : 1997/01
- Languages : English
- Source: Cryogenics - vol. 37 - n. 1
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