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An experimental study of the transfer characteristic of a power MOSFET (metal-oxide-semiconductor field effect transistor) at room temperature and at liquid nitrogen temperature, is presented. The results show that the transfer characteristic is of the power square-law relation at both temperatures. This confirms the good potentiality of power MOSFET at low temperature.
Details
- Original title: Transfer power characteristic of a power MOSFET at liquid nitrogen temperature.
- Record ID : 1993-0078
- Languages: English
- Source: Indian J. pure appl. Phys. - vol. 29 - n. 5
- Publication date: 1991/05
- Document available for consultation in the library of the IIR headquarters only.
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