Characterization of a complementary metal-oxide semiconductor operational amplifier from 300 to 4.2 K.
Author(s) : TODD-HASTINGS J., NG K. W.
Type of article: Article
Summary
The authors report the first operation of a commercially available operational amplifier (opamp), at liquid helium temperature.
Details
- Original title: Characterization of a complementary metal-oxide semiconductor operational amplifier from 300 to 4.2 K.
- Record ID : 1996-2103
- Languages: English
- Source: Rev. sci. Instrum. - vol. 66 - n. 6
- Publication date: 1995/06
- Document available for consultation in the library of the IIR headquarters only.
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