Characterization of a complementary metal-oxide semiconductor operational amplifier from 300 to 4.2 K.

Author(s) : TODD-HASTINGS J., NG K. W.

Type of article: Article

Summary

The authors report the first operation of a commercially available operational amplifier (opamp), at liquid helium temperature.

Details

  • Original title: Characterization of a complementary metal-oxide semiconductor operational amplifier from 300 to 4.2 K.
  • Record ID : 1996-2103
  • Languages: English
  • Source: Rev. sci. Instrum. - vol. 66 - n. 6
  • Publication date: 1995/06
  • Document available for consultation in the library of the IIR headquarters only.

Links


See other articles in this issue (2)
See the source