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HIGH-PERFORMANCE MICROWAVE CIRCUITS ON LANTHANUM AND ALUMINIUM OXIDE.

Author(s) : JACKSON C. M.

Type of article: Article

Summary

MICROWAVE PROPERTIES OF HIGH-TEMPERATURE FILMS DEPOSITED ON LANTHANUM AND ALUMINIUM OXIDE SUBSTRATE ARE PRESENTED. THE FILMS ARE GROWN IN SITU USING A HIGH-PRESSURE SINGLE-SOURCE SPUTTERING TECHNIQUE. MICROWAVE RESONATORS AND FILTERS ARE FABRICATED AND TESTED. THE MAXIMUM MEASURED Q VALUES ARE 1,400 ; THE SURFACE RESISTANCES WERE LESS THAN 360 MICROOHMS BETWEEN 4.2 AND 50 K. THE FILTER PERFORMANCE WAS 18 DECIBELS BETTER THAN A SIMILAR FILTER FABRICATED IN SILVER.

Details

  • Original title: HIGH-PERFORMANCE MICROWAVE CIRCUITS ON LANTHANUM AND ALUMINIUM OXIDE.
  • Record ID : 1992-0959
  • Languages: English
  • Source: J. Supercond. - vol. 3 - n. 3
  • Publication date: 1990/09
  • Document available for consultation in the library of the IIR headquarters only.

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