ShareHIGH-PERFORMANCE MICROWAVE CIRCUITS ON LANTHANUM AND ALUMINIUM OXIDE.
Author(s) : JACKSON C. M.
Type of article: Article
Summary
MICROWAVE PROPERTIES OF HIGH-TEMPERATURE FILMS DEPOSITED ON LANTHANUM AND ALUMINIUM OXIDE SUBSTRATE ARE PRESENTED. THE FILMS ARE GROWN IN SITU USING A HIGH-PRESSURE SINGLE-SOURCE SPUTTERING TECHNIQUE. MICROWAVE RESONATORS AND FILTERS ARE FABRICATED AND TESTED. THE MAXIMUM MEASURED Q VALUES ARE 1,400 ; THE SURFACE RESISTANCES WERE LESS THAN 360 MICROOHMS BETWEEN 4.2 AND 50 K. THE FILTER PERFORMANCE WAS 18 DECIBELS BETTER THAN A SIMILAR FILTER FABRICATED IN SILVER.
Details
- Original title: HIGH-PERFORMANCE MICROWAVE CIRCUITS ON LANTHANUM AND ALUMINIUM OXIDE.
- Record ID : 1992-0959
- Languages: English
- Source: J. Supercond. - vol. 3 - n. 3
- Publication date: 1990/09
- Document available for consultation in the library of the IIR headquarters only.
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Indexing
- Themes: Superconduction
- Keywords: Superconduction; Oxide; Filter; Ceramics; Microwave; Lanthanum; Aluminium; Superconductor; High temperature; Superconducting film
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- Date : 1990/09
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- Source: J. Supercond. - vol. 3 - n. 3
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- Source: J. Supercond. - vol. 4 - n. 4
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