PRODUCTION AND USE OF HIGH-GRADE SILICON-DIODE TEMPERATURE SENSORS.

Author(s) : SONDERICKER J.

Summary

THE DEVELOPMENT AND APPLICATION OF SILICON DIODE TEMPERATURE SENSORS FOR CRYOGENIC APPLICATIONS IN ISABELLE IS DESCRIBED. SELECTION OF A STABLE SILICON DIODE SHOWING MINIMAL JUNCTION VOLTAGE DROP IS DISCUSSED. A CALIBRATION CRYOSTAT CONSISTING OF AN EVACUATED POT SUSPENDED IN A LIQUID HELIUM FILLED DEWAR WAS CONSTRUCTED, AND USED TO CALIBRATE THE SENSORS USED IN ISA PROJECTS SHOWS A FAILURE RATE OF LESS THAN 1 PER CENT. PROBLEMS ASSOCIATED WITH CRYOGENIC THERMOMETRY FALLING SHORT OF CATASTROPHIC FAILURE ARE DISCUSSED.

Details

  • Original title: PRODUCTION AND USE OF HIGH-GRADE SILICON-DIODE TEMPERATURE SENSORS.
  • Record ID : 1983-0433
  • Languages: English
  • Publication date: 1981/08
  • Source: Source: Proc. CEC, S.-Diego
    vol. 27; 1163-1171; 5 fig.; 1 ref.
  • Document available for consultation in the library of the IIR headquarters only.