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Study of forward characteristics of a cryogenic temperature sensor diode.

Author(s) : BOSE M., OTA S. B.

Type of article: Article

Summary

The current dependence of the forward voltage of a cryogenic silicon diode temperature sensor is reported in the temperature range 10-300 K. The current values are varied from 10 nanoamperes to 0.1 ampere. The study helps to conclude that for all practical purposes such as commercial diodes (prescribed for a particular current value of 10 nanoamperes) can be operated for a wider range of current values, with suitable calibration data.

Details

  • Original title: Study of forward characteristics of a cryogenic temperature sensor diode.
  • Record ID : 1998-0730
  • Languages: English
  • Source: Rev. sci. Instrum. - vol. 67 - n. 12
  • Publication date: 1996/12
  • Document available for consultation in the library of the IIR headquarters only.

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