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A study on a commercial pressure sensor based on poly-crystalline silicon gauges at cryogenic temperatures under magnetic fields.

[In Japanese. / En japonais.]

Author(s) : NARA K., OKAJI M., KATO H.

Type of article: Article

Summary

Pressure sensitivity and resistance of the gauges were studied down to 5 K under magnetic fields of up to 8 T. Performance is compared with that of similar, previously reported commercial sensors. The dependence of pressure sensitivity on temperature change from room temperature down to 6 K is smaller than 4%, as long as the sensor is operated in the constant voltage mode. The change in the sensitivity under magnetic fields is also as small as 2% under the same mode. However, its zero point shift due to the temperature change is larger than 20% of the full span. The zero point shift also shows an anomalous dependence on the magnetic fields, which is about 10% of the full span and independent of temperature. Some means to improve its performance are discussed.

Details

  • Original title: [In Japanese. / En japonais.]
  • Record ID : 1995-1359
  • Languages: Japanese
  • Source: Cryogenics/ Cryog. Eng. - vol. 28 - n. 12
  • Publication date: 1993
  • Document available for consultation in the library of the IIR headquarters only.

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