THE EFFECT OF STRAIN-INDUCED DEFECTS ON TEMPERATURE BEHAVIOUR OF NIOBIUM ELECTRICAL RESISTIVITY.

[In Russian. / En russe.]

Author(s) : BORISOVA I. F.

Type of article: Article

Summary

ELECTRICAL RESISTIVITY OF NIOBIUM IN INITIAL STATE AND AFTER 20 K ROLLING IS MEASURED IN THE RANGE OF 9.5 TO 310 K. THE RESULTS ARE TREATED IN TERMS OF THE MODEL INVOLVING BOTH INTRA-AND INTERBAND SCATTERING. THE TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTIVITY OF INITIAL AND STRAINED SAMPLES, CAN BE, TO A HIGH ACCURACY, DESCRIBED BY THE MODEL. THE STRAIN-INDUCED DEFECTS ARE FOUND TO PRODUCE A DECREASE IN THE DEBYE TEMPERATURE AND AN INCREASE IN THE INTENSITY OF INTRABAND SCATTERING AND ELECTRON-PHONON INTERACTION.

Details

  • Original title: [In Russian. / En russe.]
  • Record ID : 1988-2156
  • Languages: Russian
  • Source: Fiz. nizk. Temp. - vol. 14 - n. 3
  • Publication date: 1988
  • Document available for consultation in the library of the IIR headquarters only.

Links


See other articles in this issue (2)
See the source