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ULTRAHIGH-VACUUM EVAPORATION SYSTEM WITH LOW TEMPERATURE MEASUREMENT CAPABILITY.

Author(s) : ORR B. G., GOLDMAN A. M.

Type of article: Article

Summary

AN ULTRAHIGH-VACUUM SYSTEM HAS BEEN CONSTRUCTED AND OUTFITTED WITH MOLECULAR BEAM SOURCES AND SURFACE ANALYSIS EQUIPMENT AND REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION. WITH THIS EQUIPMENT, FILMS CAN BE GROWN IN THE 0.01 AND 1 NANOTORR RANGE WITH SUBSTRATE TEMPERATURES AT 4.2-20 K. A MODIFICATION OF THE SYSTEM WILL PERMIT GROWTH AT ELEVATED TEMPERATURES FOLLOWED BY IN SITU LOW-TEMPERATURE MEASUREMENTS. THE DESIGN OF THE APPARATUS PERMITS MEASUREMENTS IN AN ENVIRONMENT IN WHICH THE TEMPERATURE CAN BE CONTROLLED FROM 0.3 TO 300 K AND THE MAGNETIC FIELD FROM 1 MICROTESLA TO 6 T.

Details

  • Original title: ULTRAHIGH-VACUUM EVAPORATION SYSTEM WITH LOW TEMPERATURE MEASUREMENT CAPABILITY.
  • Record ID : 1986-0017
  • Languages: English
  • Source: Rev. sci. Instrum. - vol. 56 - n. 6
  • Publication date: 1985
  • Document available for consultation in the library of the IIR headquarters only.

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