ShareElectron cyclotron resonance (ECR) plasma reactor for cryogenic etching.
Author(s) : AYDIL E. S., GREGUS J. A., GOTTSCHO R. A.
Type of article: Article
Summary
ECR plasma reactors are being used for ultralarge scale integrated circuit fabrication to meet the stringent requirements on submicron etching. An ECR plasma reactor is described that is designed to etch compound semiconductors and silicon at low temperatures (-170 to 20 deg C). The critical issues of plasma uniformity, ion energy control and wafer temperature control are discussed. A cryogenic electrode is used to maintain a wafer temperature of -170 more of less 2.5 deg C and the sample temperature is monitored using infrared laser interferometric thermometry.
Details
- Original title: Electron cyclotron resonance (ECR) plasma reactor for cryogenic etching.
- Record ID : 1994-2779
- Languages: English
- Source: Rev. sci. Instrum. - vol. 64 - n. 12
- Publication date: 1993/12
- Document available for consultation in the library of the IIR headquarters only.
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