Share

CRITICAL FIELDS OF VANADIUM-SILICON SUPERLATTICES.

[In Russian. / En russe.]

Author(s) : GLAZMAN L. I.

Type of article: Article

Summary

THE SUPERCONDUCTING PROPERTIES OF THE METAL-SEMICONDUCTOR SUPERLATTICES (SL) PRODUCED BY CONSECUTIVE CONDENSATION OF VANADIUM AND SILICON LAYERS ARE INVESTIGATED EXPERIMENTALLY. THE TEMPERATURE DEPENDENCE OF THE PARALLEL CRITICAL FIELD IS FOUND TO DEPEND MARKEDLY ON THE THICKNESS OF THE SILICON LAYERS. THE CRITICAL SL PARAMETERS ARE COMPARED WITH THOSE FOR ITS COMPONENT BLOCKS. A THEORETICAL MODEL OF SL WITH WEAK JOSEPHSON COUPLING BETWEEN FINITE SIZE METALLIC LAYERS IS CONSIDERED.

Details

  • Original title: [In Russian. / En russe.]
  • Record ID : 1988-0042
  • Languages: Russian
  • Source: Z. eksp. teor. Fiz. - vol. 92 - n. 4
  • Publication date: 1987
  • Document available for consultation in the library of the IIR headquarters only.

Links


See other articles in this issue (2)
See the source

Indexing