Investigation of silicon field-effect transistors in cryogenic amplifiers for radio-frequency superconducting quantum interference devices.

Author(s) : BECKER T., MÜCK M., HEIDEN C.

Type of article: Article

Summary

The authors prepared n-channel transistors, which are capable of working at liquid helium temperatures (4.2 K) and used them in cooled preamplifiers for radiofrequency SQUID readout electronics.

Details

  • Original title: Investigation of silicon field-effect transistors in cryogenic amplifiers for radio-frequency superconducting quantum interference devices.
  • Record ID : 1996-2110
  • Languages: English
  • Source: Rev. sci. Instrum. - vol. 66 - n. 5
  • Publication date: 1995/05
  • Document available for consultation in the library of the IIR headquarters only.

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