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A low-power-dissipation broadband cryogenic preamplifier utilizing gallium-arsenic MESFETs in parallel.

Author(s) : LEE A. T. J.

Type of article: Article

Summary

A voltage sensitive preamplifier design is presented for operation at 1.6 K to keep the power dissipation in the cryostat minimal, while maintaining high bandwidth and low noise. This was achieved by operating four parallel MESFETs at cryogenic temperatures in cascade with a room-temperature silicon junction field-effect transistor. The power dissipation can be reduced to 1 milliwatt with a moderate increase in noise. The preamplifier noise was found to be dominated by the cryogenic stage. The design of the preamplifier is discussed in detail. Noise measurements under a variety of bias conditions are presented along with an analysis of the different noise sources.

Details

  • Original title: A low-power-dissipation broadband cryogenic preamplifier utilizing gallium-arsenic MESFETs in parallel.
  • Record ID : 1994-0730
  • Languages: English
  • Source: Rev. sci. Instrum. - vol. 64 - n. 8
  • Publication date: 1993/08
  • Document available for consultation in the library of the IIR headquarters only.

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