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CHARGE CAPTURE BY DEFECTS APPEARING DURING 4HE CRYSTAL COOLING BELOW HALF-MELTING TEMPERATURE.

[In Russian. / En russe.]

Author(s) : EFIMOV V. B., MEJOV-DEGLIN L. P.

Type of article: Article

Summary

UNDER COOLING OF A RADIOACTIVE-SOURCE DIODE FROZEN INTO SOLID HELIUM DOWN TO TEMPERATURES TWO OR THREE TIMES BELOW THE MELTING POINT T OF THE SAMPLE AND ITS SUBSEQUENT WARMING HCP CRYSTALS OF 4HE EXPERIENCE THE FORMATION OF DEFECTS WHICH ARE CAPABLE OF CAPTURING MOVING CHARGES. AT TEMPERATURES NEAR 0.95 T MICROSCOPIC DEFECTS, MOST LIKELY DISLOCATIONS, SERVE AS CENTERS OF CAPTURE. IN BCC CRYSTALS OF 3HE GROWN IN THE SAME APPARATUS FROM COMMERCIALLY PURE GAS (UP TO 0.2% 4 HE IMPURITY) THE CHARGE CAPTURE BY DEFECTS IS NOT OBSERVED.

Details

  • Original title: [In Russian. / En russe.]
  • Record ID : 1983-0817
  • Languages: Russian
  • Source: Fiz. nizk. Temp. - vol. 8 - n. 5
  • Publication date: 1982
  • Document available for consultation in the library of the IIR headquarters only.

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