Cryogenic operation of silicon power devices.
Author(s) : SINGH R., BALIGA B. J.
Type of monograph: Book
Summary
This book is part of the Power Electronics and Power Systems Series. It presents the different characteristics of silicon power devices operated below -55 °C (220 K). It provides data and physics based models for power devices operated at temperatures down to 77 K for the first time within a single source. All commercially available devices have been included to provide comprehensive coverage. Also, a fundamental analysis of devices identifies the suitability of various devices to applications requiring cryogenic operations. A quantitative analysis of the relative strengths and weaknesses of these devices is also presented.
Details
- Original title: Cryogenic operation of silicon power devices.
- Record ID : 2005-1037
- Languages: English
- Publication: Kluwer - United states/United states
- Publication date: 1998
- ISBN: 0792381572
- Source: Source: 168 p. (16 x 24); fig.; tabl.; ref.; index; USD 129.50.
- Document available for consultation in the library of the IIR headquarters only.
Indexing
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SILICON JUNCTION FIELD EFFECT TRANSISTORS AT 4....
- Author(s) : NAWROCKI W.
- Date : 1988
- Languages : English
- Source: Cryogenics - vol. 28 - n. 6
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THERMOELECTRIC PROPERTIES OF A SILICIUM KT 629A...
- Author(s) : IGNAT'EV V. K., PUDALOV V. M.
- Date : 1983
- Languages : Russian
- Source: Prib. Teh. eksp. - n. 1
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COMPACT CADMIUM-SELENIUM LASER WITH MICROMINIAT...
- Author(s) : VALK B., OLSON D. J., SALOUR M. M.
- Date : 1986
- Languages : English
- Source: Rev. sci. Instrum. - vol. 57 - n. 12
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PHEMT as a circuit element for high impedance n...
- Author(s) : KOROLEV A. M., SHULGA V. M., GRITSENKO I. A., et al.
- Date : 2015/04
- Languages : English
- Source: Cryogenics - vol. 67
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TEMPERATURE CONTROLLERS FOR CRYOGENIC APPLICATI...
- Author(s) : PAL A. K.
- Date : 1978
- Languages : English
- Source: Indian J. Cryog. - vol. 3 - n. 4
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