High-critical temperature superconducting transistor.
[In Japanese. / En japonais.]
Author(s) : ABE H.
Type of article: Article
Summary
The authors reviewed the current progress of high-critical temperature superconducting three terminal devices. A superconducting base three terminal device was produced and evaluated. High-critical temperature field effect transistors and flux-flow transistors, which have been operated in a good transistor action, are reviewed.
Details
- Original title: [In Japanese. / En japonais.]
- Record ID : 1995-0025
- Languages: Japanese
- Source: Cryogenics/ Cryog. Eng. - vol. 29 - n. 3
- Publication date: 1994
- Document available for consultation in the library of the IIR headquarters only.
Links
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Indexing
- Themes: Superconduction
- Keywords: Superconduction; Oxygen; Bismuth; Barium; Transistor; Titanium; Superconductor; Strontium; Rubidium; Indium; High temperature; Niobium
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- Author(s) : MOISEEV D. P.
- Date : 1987
- Languages : Russian
- Source: Fiz. nizk. Temp. - vol. 13 - n. 6
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- Author(s) : RUDENKO E. N., USOSKIN A. I.
- Date : 1990
- Languages : English
- Source: Fiz. nizk. Temp. - vol. 16 - n. 5
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- Author(s) : SPENCER N. D.
- Date : 1990
- Languages : English
- Source: Rev. sci. Instrum. - vol. 61 - n. 5
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- Author(s) : LEONT'EVA A. V.
- Date : 1989
- Languages : Russian
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STABILIZATION OF THE 108 K SUPERCONDUCTING PHAS...
- Author(s) : AGOSTINELLI E.
- Date : 1989/09
- Languages : English
- Source: J. Supercond. - vol. 2 - n. 3
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