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BEHAVIOUR OF DIFFUSED JUNCTION SILICON SOLAR CELLS IN THE TEMPERATURE RANGE 77-500 K.

Author(s) : ARORA J. D., MATHUR P. C.

Type of article: Article

Summary

CALCULATION OF THE ABSORPTION COEFFICIENT OF SI BETWEEN 77 AND 500 K AS A FUNCTION OF THE WAVELENGTH BY USING THE THEORY OF INDIRECT TRANSITIONS. BASED ON THE VALUE OF THIS COEFFICIENT, CALCULATION OF THE PERFORMANCE OF SOLAR SI N + P CELLS AS A TEMPERATURE FUNCTION. EXPERIMENTAL VERIFICATION. (Bull. CNRS, FR., 81-730-20547.) ABSORPTION -MEASUREMENT -CALCULATION -SOLAR CELL.

Details

  • Original title: BEHAVIOUR OF DIFFUSED JUNCTION SILICON SOLAR CELLS IN THE TEMPERATURE RANGE 77-500 K.
  • Record ID : 1982-1377
  • Languages: English
  • Source: J. appl. Physiol. - vol. 52 - n. 5
  • Publication date: 1981

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