ShareCOMPONENTS: BETWEEN 218 AND 573 K (-55 AND 300 DEG C), THINK OF A SILICON TEMPERATURE SENSOR.
COMPOSANTS : ENTRE 218 ET 573 K (-55 ET 300 DEG C), PENSEZ AU CAPTEUR DE TEMPERATURE SILICIUM.
Type of article: Article
Summary
DESCRIPTION OF TWO DESIGNS OF SILICON COLLECTORS, ONE WITH A POLARISED BASIC CELL AND THE OTHER WITH TWO CELLS MOUNTED OPPOSITELY. LINEARISATION PROCEDURE FOR THE COLLECTOR, ERECTION DIAGRAMS AND PERFORMANCE. (Bibliogr. int. IFP-AFME-CNRS, FR., 85-T230-8950.
Details
- Original title: COMPOSANTS : ENTRE 218 ET 573 K (-55 ET 300 DEG C), PENSEZ AU CAPTEUR DE TEMPERATURE SILICIUM.
- Record ID : 1985-2311
- Languages: French
- Source: BIPM, Comité international des Poids et Mesures - vol. 50 - n. 6
- Publication date: 1985
- Document available for consultation in the library of the IIR headquarters only.
Links
See the source
Indexing
- Themes: Thermodynamic measurements
- Keywords: Thermometer; Measurement; Thermometry; Silicon; Performance
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MINIATURE SILICON DIODE THERMOMETERS FOR CRYOGE...
- Author(s) : RAO M. G., SCURLOCK R. G., WU Y. Y.
- Date : 1983
- Languages : English
- Source: Cryogenics - vol. 23 - n. 12
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Silicon diode temperature sensors for process s...
- Author(s) : MCDONALD P. C.
- Date : 1995/03
- Languages : English
- Source: Cryogenics - vol. 35 - n. 3
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Matching the resistivity of silicon-niobium thi...
- Author(s) : VECCHIO D. de, TABOREK P., RUTLEDGE J. E.
- Date : 1995/11
- Languages : English
- Source: Rev. sci. Instrum. - vol. 66 - n. 11
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AMORPHOUS SILICON THERMOMETER.
- Author(s) : YOSHIDA K., YAMAURA Y., TAWADA Y.
- Date : 1988
- Languages : Japanese
- Source: Cryogenics/ Cryog. Eng. - vol. 23 - n. 3
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THE USE OF MINIATURE SILICON DIODE THERMOMETERS...
- Author(s) : RAO M. G., SCURLOCK R. G.
- Date : 1987/08/24
- Languages : English
- Source: Development in refrigeration, refrigeration for development. Proceedings of the XVIIth international Congress of Refrigeration.
- Formats : PDF
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