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BEHAVIOUR OF SEMICONDUCTOR LOW TEMPERATURE SENSORS IN ELECTROMAGNETIC ENVIRONMENTS.

Author(s) : ZAWADZKI M., SUJAK B.

Type of article: Article

Summary

THE EFFECT OF AN ELECTROMAGNETIC FIELD, WITH FREQUENCIES IN THE 30-300 MHERTZ RANGE, ON SEMICONDUCTOR CRYOGENIC THERMOMETERS, EG SILICON DIODE TEMPERATURE SENSORS AS WELL AS SILICON AND GERMANIUM RESISTANCE THERMOMETERS, HAS BEEN INVESTIGATED AT TEMPERATURES FROM 70 TO 300 K. THE CHANGES IN VOLTAGE DROP OR RESISTANCE VERSUS TEMPERATURE CHARACTERISTICS OF THE TESTED THERMOMETERS HAVE BEEN FOUND. THE SEMICONDUCTOR LOW TEMPERATURE SENSORS MAY ONLY BE USED FOR ACCURATE RECALIBRATION IN THE PRESENCE OF A WELL-KNOWN, LOW INTENSITY ELECTROMAGNETIC FIELD AT A CONSTANTLY HELD FREQUENCY NOT CORRESPONDING WITH THE MAXIMUM VALUE OF THE < ERROR >.

Details

  • Original title: BEHAVIOUR OF SEMICONDUCTOR LOW TEMPERATURE SENSORS IN ELECTROMAGNETIC ENVIRONMENTS.
  • Record ID : 1984-1817
  • Languages: English
  • Source: Cryogenics - vol. 23 - n. 11
  • Publication date: 1983

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