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INVESTIGATION OF THE ELECTRIC AND MAGNETIC PROPERTIES OF GAPLESS SEMIMAGNETIC SEMICONDUCTORS HG(1-X)MN(X)TE AT LOW AND ULTRALOW TEMPERATURES.

[In Russian. / En russe.]

Author(s) : BRANDT N. B.

Type of article: Article

Summary

THE TEMPERATURE AND FIELD DEPENDENCES OF THE HALL COEFFICIENT AND RESISTIVITY OF THE GAPLESS SEMIMAGNETIC SEMICONDUCTORS HG(1-X)MN(X)TE (X BEING HIGHER THAN 0 AND LOWER THAN 0.075) OF THE P-TYPE ARE INVESTIGATED IN MAGNETIC FIELDS UP TO 40 KOE AND TEMPERATURES BETWEEN 0.04 AND 20 K. WITH LOWERING OF THE TEMPERATURE BELOW 4 K A GROWTH, BY 2 TO 70 TIMES, OF THE HALL COEFFICIENT IS OBSERVED SIMULTANEOUSLY WITH A DECREASE OF THE SPECIFIC RESISTANCE BY 1.5 TO 6 TIMES. A MODEL IS PROPOSED TO EXPLAIN THESE RESULTS.

Details

  • Original title: [In Russian. / En russe.]
  • Record ID : 1983-2066
  • Languages: Russian
  • Source: Z. eksp. teor. Fiz. - vol. 84 - n. 3
  • Publication date: 1983
  • Document available for consultation in the library of the IIR headquarters only.

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