ShareLOW-TEMPERATURE CONDUCTIVITY OF STRONGLY DISORDERED COULOMB SYSTEMS.
[In Russian. / En russe.]
Author(s) : BURIN A. L., MAKSIMOV L. A.
Type of article: Article
Summary
A NOVEL MECHANISM OF CONDUCTIVITY OF STRONGLY DISORDERED SYSTEMS IS PROPOSED WHICH INVOLVES ELECTRON-ELECTRON INTERACTIONS. THE LOW-TEMPERATURE DEPENDENCE OF THE CONDUCTIVITY CAN BE DESCRIBED BY A POWER RATHER THAN EXPONENTIAL LAW. THE EXPERIMENTAL DATA ON DOPED SEMICONDUCTORS CAN BE EXPLAINED ON THE BASIS OF THE RESULTS OF THE PRESENT INVESTIGATION.
Details
- Original title: [In Russian. / En russe.]
- Record ID : 1990-0465
- Languages: Russian
- Source: Z. eksp. teor. Fiz. - vol. 95 - n. 4
- Publication date: 1989/04
- Document available for consultation in the library of the IIR headquarters only.
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