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Low temperature current-voltage characteristics of silicon diodes used as thermometers.

Author(s) : SZMYRKA-GRZEBYK A., LIPINSKI L.

Type of article: Article

Summary

With the aim of the determination of an optimum value of the forward current for diode thermometers, the V (voltage) versus I (current) characteristics of two types of industrial diodes and diode thermometers have been measured in the temperature range 4-300 K. All types of the diodes tested exhibited a logarithmic dependence of V on I in the temperature range above 20 K. Below this temperature, large deviations from the classical theory of the p-n junction have been observed. In some diodes there were an instability of the voltage, a hysteresis of the V versus I characteristics, a negative resistance or an effect of "switching" in resistivity. These effects can influence the accuracy of measurement.

Details

  • Original title: Low temperature current-voltage characteristics of silicon diodes used as thermometers.
  • Record ID : 1993-2521
  • Languages: English
  • Source: Cryogenics - vol. 33 - n. 2
  • Publication date: 1993

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