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SEMICONDUCTOR DIODES AS CRYOGENIC TEMPERATURE SENSORS.

Author(s) : MAITI C. R., MITRA S. S., GHORAI S. K.

Type of article: Article

Summary

THE PRESENT PAPER GIVES A REPORT ON THE CHARACTERISTICS OF COMMERCIALLY AVAILABLE P-N JUNCTION DIODES, WHICH ARE FOUND TO BE SUITABLE CRYOGENIC TEMPERATURE SENSORS FROM 77 TO 300 K. THE RESISTANCE, AT CONSTANT CURRENT, VERSUS TEMPERATURE CHARACTERISTICS OF GERMANIUM DIODES (BEL, OA GROUP) ARE LINEAR FROM 300 TO 200 K AND FROM ABOUT 130 TO 77 K, WITH A SHARP RISE IN RESISTANCE IN THE LATER TEMPERATURE RANGE, WHEREAS, FOR SILICON DIODES AND ZENER DIODES, THE RESISTANCE IS PROPORTIONAL TO TEMPERATURE OVER THE WHOLE TEMPERATURE RANGE 77-300 K. J. V.

Details

  • Original title: SEMICONDUCTOR DIODES AS CRYOGENIC TEMPERATURE SENSORS.
  • Record ID : 1982-0730
  • Languages: English
  • Source: Indian J. Cryog. - vol. 5 - n. 1
  • Publication date: 1980
  • Document available for consultation in the library of the IIR headquarters only.

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