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LOW TEMPERATURE PROPERTIES OF TUNNEL JUNCTIONS WITH AN AMORPHOUS LAYER.

[In Russian. / En russe.]

Author(s) : KOZUB V. I.

Type of article: Article

Summary

THE LOW-TEMPERATURE PROPERTIES ARE CONSIDERED OF A TUNNEL JUNCTION BETWEEN TWO NORMAL METALS WITH AN AMORPHOUS LAYER, THE PROPERTIES BEING CONDITIONED BY THE PRESENCE OF TWO-LEVEL SYSTEMS (TLS) IN THE LAYER. AN EQUATION SET FOR TUNNELING UNDER THESE CONDITIONS IS DERIVED. IT IS SHOWN THAT ALONG WITH A DIRECT EFFECT OF THE TLS ON ELECTRON TUNNELING, THE BACK EFFECT OF THE ELECTRONS ON THE TLS AS WELL AS THE INTERACTION BETWEEN THE TLS AND < BANK > ELECTRONS WHICH DOES NOT INVOLVE TUNNELING MAY BE IMPORTANT.

Details

  • Original title: [In Russian. / En russe.]
  • Record ID : 1984-1803
  • Languages: Russian
  • Source: Z. eksp. teor. Fiz. - vol. 86 - n. 6
  • Publication date: 1984
  • Document available for consultation in the library of the IIR headquarters only.

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