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METAL SEMICONDUCTOR DIODES AS LOW TEMPERATURE SENSORS.

Author(s) : CHANDRA M. M., PRASAD M., SURYAN G.

Type of article: Article

Summary

JUNCTION DIODES HAVE BEEN USED QUITE FREQUENTLY AS LOW TEMPERATURE SENSORS. THIS PAPER DESCRIBES THE USE OF METAL-SEMICONDUCTOR DIODES (SCHOTTKY DIODES) AS TEMPERATURE SENSORS FROM ROOM TEMPERATURE TO LIQUID HELIUM TEMPERATURE. THE VOLTAGE TEMPERATURE CHARACTERISTICS OF THE DIODES WHEN BIASED AT A FIXED FORWARD CURRENT ARE FOUND TO BE QUITE SIMILAR TO THAT OBTAINED FOR SILICON P-N JUNCTIONS. THE CHARACTERISTICS HAVE TWO SLOPES, WITH THE JUNCTION VOLTAGE DROP VARYING ALMOST LINEARLY WITH TEMPERATURE UP TO 40 K AFTER WHICH THE VOLTAGE DROP INCREASES QUITE RAPIDLY UP TO 4.2 K. IT CAN BE SHOWN THAT THE VALUE OF VOLTAGE, AS TEMPERATURE TENDS TO ZERO, GIVES THE BARRIER HEIGHT AT ZERO DEGREE KELVIN UNLIKE A P-N JUNCTION FOR WHICH THE VALUE OF THE BAND GAP IS OBTAINED. THE SHAPE OF THE VOLTAGE TEMPERATURE CHARACTERISTICS IS DISCUSSED IN THE LIGHT OF THERMIONIC EMISSION THEORY AND DROP ACROSS THE BULK RESISTANCE.

Details

  • Original title: METAL SEMICONDUCTOR DIODES AS LOW TEMPERATURE SENSORS.
  • Record ID : 1986-0504
  • Languages: English
  • Source: Indian J. Cryog. - vol. 9 - n. 4
  • Publication date: 1984
  • Document available for consultation in the library of the IIR headquarters only.

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