PROPERTIES OF THERMALLY DIFFUSED VANADIUM3 -SILICON MULTILAYER FILMS.

Author(s) : STEFANO S. de

Type of article: Article

Summary

RESULTS ARE REPORTED FOR FILMS OBTAINED BY THERMAL ANNEALING UNDER VACUUM OF A FEW VANADIUM AND SILICON LAYERS SEQUENTIALLY DEPOSITED BY ELECTRON-BEAM EVAPORATION. < RESISTIVE > CRITICAL TEMPERATURES UP TO 16.2 K WITH VERY SHARP TRANSITION WIDTH ARE OBSERVED. THE TEMPERATURE DEPENDENCE OF THE NORMAL STATE RESISTIVITY IS DISCUSSED IN THE FRAMEWORK OF A PHENOMENOLOGICAL < SHUNT-RESISTOR MODEL >.

Details

  • Original title: PROPERTIES OF THERMALLY DIFFUSED VANADIUM3 -SILICON MULTILAYER FILMS.
  • Record ID : 1985-2286
  • Languages: English
  • Source: Cryogenics - vol. 25 - n. 4
  • Publication date: 1985

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