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RESONANT TUNNELING AT THE SUPERCONDUCTOR-SEMICONDUCTOR-SUPERCONDUCTOR JUNCTION.

[In Russian. / En russe.]

Author(s) : ASLAMAZOV L. G., FISTUL M. V.

Type of article: Article

Summary

IT IS SHOWN THAT IN THE CASE OF A NON-DEGENERATE SEMICONDUCTOR THE CRITICAL CURRENT FOR SUPERCONDUCTOR-SEMICONDUCTOR-SUPERCONDUCTOR JUNCTIONS MAY DECREASE WITH THE THICKNESS OF THE SEMICONDUCTOR LAYER MORE SLOWLY THAN ON ORDINARY TUNNELING. THE EFFECT IS ASCRIBED TO RESONANT PASSAGE OF COHERENT ELECTRONS ALONG TRAJECTORIES THROUGH PERIODICALLY SITUATED IMPURITY ATOMS FORMED WITH A LOW PROBABILITY IN THE SEMICONDUCTOR. THE TEMPERATURE DEPENDENCE OF THE CRITICAL CURRENT AND THE REGION OF EXISTENCE OF THE EFFECT ARE FOUND.

Details

  • Original title: [In Russian. / En russe.]
  • Record ID : 1983-0879
  • Languages: Russian
  • Source: Z. eksp. teor. Fiz. - vol. 83 - n. 3
  • Publication date: 1982
  • Document available for consultation in the library of the IIR headquarters only.

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