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CRITICAL CURRENT OF SUPERCONDUCTING WEAK-COUPLED STRUCTURES ON DEGENERATE SEMICONDUCTOR SURFACE IN < DIRTY > LIMIT.

[In Russian. / En russe.]

Author(s) : ALFEEV V. N., GRICENKO N. I.

Type of article: Article

Summary

THE EXPRESSION OF THE CRITICAL CURRENT IN THE QUASI-TWO-DIMENSIONAL COPLANAR STRUCTURES FORMED BY DEPOSITION OF SUPERCONDUCTING FILMS ON THE DEGENERATE SEMICONDUCTOR SURFACE IS OBTAINED ON THE BASIS OF MICROSCOPIC THEORY IN THE CASE WHEN THE PRINCIPAL CARRIER INTERCHANGE MECHANISM BETWEEN SUPERCONDUCTING FILMS IS THE CARRIER SCATTERING ON THE IMPURITIES IN THE SEMICONDUCTOR. THE TEMPERATURE DEPENDENCE OF CRITICAL CURRENT IS PRESENTED AND THE COMPARISON WITH THE EXPERIMENTAL DATA IS CARRIED OUT.

Details

  • Original title: [In Russian. / En russe.]
  • Record ID : 1984-0487
  • Languages: Russian
  • Source: Fiz. nizk. Temp. - vol. 9 - n. 6
  • Publication date: 1983
  • Document available for consultation in the library of the IIR headquarters only.

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