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SEMIMETAL-SEMICONDUCTOR TRANSITION AT VARYING THICKNESS OF BISMUTH-ANTIMONY FILMS.

[In Russian. / En russe.]

Author(s) : BUHSTAB E. I., KOMNIK Ju. F., NIKITIN Ju. V.

Type of article: Article

Summary

THE VARIATION OF ELECTRIC RESISTANCE AND THE MAGNETORESISTANCE COEFFICIENT OF BISMUTH AND BISMUTH-ANTIMONY FILMS (0.17 BISMUTH AND 0.83 ANTIMONY) ARE STUDIED AT A 4 TO 6 MICROMETER INCREASE OF THICKNESS L IN THE TEMPERATURE RANGE 4.2 TO 300 K. THE COMPARISON OF THE RESISTANCE AND MAGNETORESISTANCE OF THESE FILMS IN THE RANGE OF LARGE THICKNESSES REVEALED THAT FOR L HIGHER THAN 7 MICROMETERS THE CHARGE CARRIER CONCENTRATION DECREASES SUGGESTING A SEMIMETAL-SEMICONDUCTOR TRANSITION TO OCCUR WITH AN INCREASE IN THE LAYER THICKNESS.

Details

  • Original title: [In Russian. / En russe.]
  • Record ID : 1983-0834
  • Languages: Russian
  • Source: Fiz. nizk. Temp. - vol. 8 - n. 5
  • Publication date: 1982
  • Document available for consultation in the library of the IIR headquarters only.

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