ShareDeposition of NdNiO3 thin films on Si(100) by radiofrequency sputtering.
Dépôt de couches minces de NdNiO3 sur Si(100) par pulvérisation cathodique.
Author(s) : LAFFEZ P., ZAGHRIOUI M., LACORRE P., BROUSSE T., MONOT I.
Type of article: Article
Summary
NdNiO3 thin films with metal-insulator transition were deposited by radiofrequency sputtering and subsequent annealing under oxygen pressure on silicon(100). The deposition parameters and annealing conditions were optimized. Reproductible metal-insulator transition were obtained at 147 K.
Details
- Original title: Dépôt de couches minces de NdNiO3 sur Si(100) par pulvérisation cathodique.
- Record ID : 2000-0024
- Languages: French
- Source: Vide - vol. 53 - n. 289
- Publication date: 1998
- Document available for consultation in the library of the IIR headquarters only.
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Indexing
- Themes: Superconduction
- Keywords: Superconduction; Superconducting film
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- Author(s) : BELOUET C.
- Date : 1998
- Languages : French
- Source: Vide - vol. 54 - n. 288
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Les transistors supraconducteurs.
- Author(s) : BERNSTEIN P.
- Date : 1998
- Languages : French
- Source: Vide - vol. 53 - n. 289
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