ShareTHE ANOMALOUS TEMPERATURE DEPENDENCES OF RESISTIVITY AND HALL COEFFICIENT IN MERCURY-MANGANESE-TELLURIUM SEMICONDUCTOR COMPOUNDS, WITH A LOW TELLURIUM CONTENT AT VERY LOW TEMPERATURES.
[In Russian. / En russe.]
Author(s) : BRANDT N. B.
Type of article: Article
Summary
IN THESE P-TYPE ZERO-GAP SEMIMAGNETIC SEMICONDUCTORS THE CONDUCTION BAND ELECTRON MOBILITY HAS BEEN FOUND TO INCREASE BY 4-5 TIMES WHEN TEMPERATURE DECREASES FROM ABOUT 1.5 K DOWN TO 0.08 K. THE ANOMALOUS INCREASE OF MOBILITY IS EXPLAINED AS DUE TO THE BONDING OF CHARGED CENTERS INTO THE NEUTRAL DONOR-ACCEPTOR COMPLEXES.
Details
- Original title: [In Russian. / En russe.]
- Record ID : 1983-0839
- Languages: Russian
- Source: Fiz. nizk. Temp. - vol. 8 - n. 6
- Publication date: 1982
- Document available for consultation in the library of the IIR headquarters only.
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