SharePerformance of CMOS three-valued logic device (ternary inverter) at liquid nitrogen temperature.
Author(s) : SRIVASTAVA A.
Type of article: Article
Summary
Performance improves at 77 K compared with room temperature behaviour. This improvement is attributed to the rise in absolute threshold voltages of n-and p-channel MOSFET devices which in turn allows MOSFET devices to operate between well defined near-above-threshold (on) and subthreshold (off) regions.
Details
- Original title: Performance of CMOS three-valued logic device (ternary inverter) at liquid nitrogen temperature.
- Record ID : 1993-2464
- Languages: English
- Source: Cryogenics - vol. 32 - n. 12
- Publication date: 1992
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Indexing
- Themes: Other applications of cryogenic temperatures
- Keywords: Semiconductor; Electronics; Performance; Cryogenics
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- Date : 1993
- Languages : English
- Source: Cryogenics - vol. 33 - n. 2
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- Author(s) : BUTCHER P., MARCH N. H., TOSI M. P.
- Date : 1993
- Languages : English
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- Author(s) : HARUYAMA T., KIRSCHMAN R. K.
- Date : 1991/12
- Languages : English
- Source: Cryogenics - vol. 31 - n. 12
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Cryogenic operation of silicon power devices.
- Author(s) : SINGH R., BALIGA B. J.
- Date : 1998
- Languages : English
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- Author(s) : RAMIREZ-GARCIA E., ZEROUNIAN N., CROZAT P., et al.
- Date : 2009/11
- Languages : English
- Source: Cryogenics - vol. 49 - n. 11
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