SharePhotothermal displacement technique: a method to determine the variation of thermal conductivity versus temperature in silicon.
Author(s) : BENEDETTO G., SPAGNOLO R., BOARINO L.
Type of article: Article
Summary
The method is based on the application of a photothermal displacement technique in the temperature range 30-300 K. The results obtained on samples with different types and dopant concentrations are shown to be in good agreement with those reported in the literature.
Details
- Original title: Photothermal displacement technique: a method to determine the variation of thermal conductivity versus temperature in silicon.
- Record ID : 1994-0864
- Languages: English
- Source: Rev. sci. Instrum. - vol. 64 - n. 8
- Publication date: 1993/08
- Document available for consultation in the library of the IIR headquarters only.
Links
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Indexing
- Themes: Thermodynamic measurements
- Keywords: Thermal conductivity; Semiconductor; Cryotemperature; Measurement; Silicon
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THERMAL CONDUCTIVITY MEASUREMENT FROM 30 TO 750 K.
- Author(s) : CAHILL D. G.
- Date : 1990
- Languages : English
- Source: Rev. sci. Instrum. - vol. 61 - n. 2
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THE COMPARATIVE METHOD OF THERMAL CONDUCTIVITY ...
- Author(s) : JEZOWSKI A.
- Date : 1989
- Languages : Polish
- Source: Chlodnictwo - vol. 24 - n. 7-12
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Thermal conductance of copper-copper and copper...
- Author(s) : YU J., YEE A. L., SCHWALL R. E.
- Date : 1992
- Languages : English
- Source: Cryogenics - vol. 32 - n. 7
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A METHOD OF MEASURING THE THERMAL CONDUCTIVITY ...
- Author(s) : LOCATELLI M., NUNEZ-REGUEIRO M.
- Date : 1981
- Languages : English
- Source: J. Phys., D - vol. 14 - n. 5
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STATIC AND DYNAMIC THERMAL CONDUCTANCE OF BALL ...
- Author(s) : LI X. Z.
- Date : 1990/09
- Languages : English
- Source: Cryogenics - vol. 30
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