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Photothermal displacement technique: a method to determine the variation of thermal conductivity versus temperature in silicon.

Author(s) : BENEDETTO G., SPAGNOLO R., BOARINO L.

Type of article: Article

Summary

The method is based on the application of a photothermal displacement technique in the temperature range 30-300 K. The results obtained on samples with different types and dopant concentrations are shown to be in good agreement with those reported in the literature.

Details

  • Original title: Photothermal displacement technique: a method to determine the variation of thermal conductivity versus temperature in silicon.
  • Record ID : 1994-0864
  • Languages: English
  • Source: Rev. sci. Instrum. - vol. 64 - n. 8
  • Publication date: 1993/08
  • Document available for consultation in the library of the IIR headquarters only.

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