PROPERTIES OF NIOBIUM NITRIDE BASED JOSEPHSON TUNNEL JUNCTIONS.

Author(s) : CUCULO A. M.

Type of article: Article

Summary

HIGH CRITICAL TEMPERATURE (16.8 K) NIOBIUM NITRIDE THIN FILMS HAVE BEEN PREPARED BY RF DIODE SPUTTERING IN NITROGEN/ARGON ATMOSPHERE AND SUBSEQUENT HIGH TEMPERATURE ANNEALING. JOSEPHSON TUNNEL JUNCTIONS HAVE BEEN MADE BY THERMAL OXIDATION OF THE FILMS. THE GEOMETRY IS DEFINED BY HIGH RESOLUTION PHOTOLITHOGRAPHY. THE JOSEPHSON JUNCTIONS HAVE BEEN CHARACTERIZED BY MAGNETIC FIELD DIFFRACTION MEASUREMENTS.

Details

  • Original title: PROPERTIES OF NIOBIUM NITRIDE BASED JOSEPHSON TUNNEL JUNCTIONS.
  • Record ID : 1985-0040
  • Languages: English
  • Source: Cryogenics - vol. 24 - n. 1
  • Publication date: 1984

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