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TECHNIQUES FOR THE GROWTH OF SUPERCONDUCTING OXIDE THIN FILMS USING PURE OZONE VAPOUR.

Author(s) : BERKLEY D. D.

Type of article: Article

Summary

PURE CONDENSED OZONE IS DISTILLED AT 77 K FROM A DILUTE MIXTURE OF OZONE IN OXYGEN GAS. THE CONDENSED OZONE IS SUBSEQUENTLY HEATED, RAISING ITS VAPOUR PRESSURE TO PROVIDE AN ADEQUATE FLOW OF OZONE GAS INTO THE THIN FILM GROWTH CHAMBER. THIN FILMS OF YBACUO(7-) WITH ZERO RESISTANCE AT TEMPERATURES AS HIGH AS 85 K HAVE BEEN GROWN WITH A DEPOSITION CHAMBER PRESSURE OF ONLY 0.1 MICROTORR AND WITHOUT A POST-DEPOSITION ANNEAL PROCESSING STEP. UNLIKE MOST OTHER COMMONLY USED FORMS OF HIGHLY REACTIVE OXYGEN, OZONE CAN BE MADE AND STORED IN VERY PURE FORM.

Details

  • Original title: TECHNIQUES FOR THE GROWTH OF SUPERCONDUCTING OXIDE THIN FILMS USING PURE OZONE VAPOUR.
  • Record ID : 1991-0532
  • Languages: English
  • Source: Rev. sci. Instrum. - vol. 60 - n. 12
  • Publication date: 1989
  • Document available for consultation in the library of the IIR headquarters only.

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