GROWTH MECHANISM OF HIGH CRITICAL TEMPERATURE PHASE IN LEADED BSCCO SYSTEM.

Author(s) : HATANO T.

Type of article: Article

Summary

THE CRYSTAL GROWTH OF THE HIGH CRITICAL TEMPERATURE PHASE TAKES PLACE WITH THE COEXISTENCE OF A PARTIAL MELTING PHASE. A GROWTH MECHANISM IS PROPOSED IN WHICH THE HIGH CRITICAL TEMPERATURE PHASE PRECIPITATES FROM THE MELTING PHASE DURING SINTERING. THE SOLIDIFICATION OF THE MELTING PHASE DURING THE SUBSEQUENT COOLING PROCESS BECOMES AN INEVITABLE CAUSE OF THE LIMITED CRITICAL CURRENT DENSITY IN THIS SYSTEM.

Details

  • Original title: GROWTH MECHANISM OF HIGH CRITICAL TEMPERATURE PHASE IN LEADED BSCCO SYSTEM.
  • Record ID : 1991-1965
  • Languages: English
  • Source: Cryogenics - vol. 30 - n. 7
  • Publication date: 1990

Links


See other articles in this issue (13)
See the source