Sintered diamond anvil high-pressure cell for electrical resistance measurements at low temperatures up to 50 Gpascals.

Author(s) : AKAHAMA Y., KOBAYASHI M., KAWAMURA H., ENDO S.

Type of article: Article

Summary

The apparatus has been designed to minimize the pressure shift during the cooling cycle from room temperature to 1.2 K. Pressure is calibrated using the pressure dependence of the superconducting transition temperature of bismuth to 50 Gpascals. The usefulness of the apparatus is demonstrated by electrical resistance and transition temperature measurements on selenium and zirconium up to 60 Gpascals.

Details

Original title: Sintered diamond anvil high-pressure cell for electrical resistance measurements at low temperatures up to 50 Gpascals.
Record ID : 1994-2109
Languages: English
Source: Rev. sci. Instrum. - vol. 64 - n. 7
Publication date: 1993/07
Document available for consultation in the library of the IIR headquarters only.

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Indexing

Themes: Low-temperature physics;
Transport and handling of cryogenic fluids;
Cryogenics safety, instrumentation and metrology;
Superconduction
Keywords: Superconduction; Cryotemperature; Measurement; Bismuth; Critical temperature; Electrical resistance; Zirconium; Superconductor; Selenium; Pressure; High temperature