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TECHNIQUE FOR HIGH-PRESSURE ELECTRICAL CONDUCTIVITY MEASUREMENT IN DIAMOND ANVIL CELLS AT CRYOGENIC TEMPERATURES.

Author(s) : ERSKINE D., YU P. Y., MARTINEZ G.

Type of article: Article

Summary

A TECHNIQUE IS DESCRIBED FOR MAKING FOUR-PROBE ELECTRICAL CONDUCTIVITY MEASUREMENTS ON BULK SAMPLES IN A DIAMOND ANVIL CELL. THE TECHNIQUE HAS BEEN SUCCESSFULLY APPLIED UP TO 48 GPASCALS AND AT BELOW 4.2 K TO MEASURE THE SUPERCONDUCTING TRANSITION TEMPERATURES (T), OF LEAD, GALLIUM PHOSPHATE AND SILICON. A METHOD FOR ANALYZING THE RESISTANCE VERSUS TEMPERATURE CURVE IN THE VICINITY OF THE SUPERCONDUCTING TRANSITION IS ALSO DESCRIBED. THIS METHOD IS APPLIED TO DETERMINE THE PRESSURE DEPENDENCE OF T IN SILICON IN THE REGION WHERE T VARIES RAPIDLY WITH PRESSURE.

Details

  • Original title: TECHNIQUE FOR HIGH-PRESSURE ELECTRICAL CONDUCTIVITY MEASUREMENT IN DIAMOND ANVIL CELLS AT CRYOGENIC TEMPERATURES.
  • Record ID : 1987-1257
  • Languages: English
  • Source: Rev. sci. Instrum. - vol. 58 - n. 3
  • Publication date: 1987
  • Document available for consultation in the library of the IIR headquarters only.

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