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Thin film microcalorimeter for heat capacity measurements from 1.5 to 800 K.

Author(s) : DENLINGER D. W., ABARRA E. N., ALLEN K., ROONEY P. W., MESSER M. T., WATSON S. K., HELLMAN F.

Type of article: Article

Summary

Semiconductor processing techniques are used to create a device with an amorphous silicon nitride membrane as the sample substrate, a platinum thin film resistor for temperatures greater than 40 K, and either a thin film amorphous niobium-silicon or a novel boron-doped polycrystalline silicon thermometer for lower temperatures. The addenda of the device, including substrate, is approximately two orders of magnitude less than any existing calorimeter used for measuring thin films. The device is capable of measuring the heat capacity of thin film samples as small as a few micrograms.

Details

  • Original title: Thin film microcalorimeter for heat capacity measurements from 1.5 to 800 K.
  • Record ID : 1995-0088
  • Languages: English
  • Source: Rev. sci. Instrum. - vol. 65 - n. 4
  • Publication date: 1994/04
  • Document available for consultation in the library of the IIR headquarters only.

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