ShareResistivity of copper and silver films on silicon(100)2x1.
Resistivité de couche minces de cuivre et d'argent sur silicium(100)2x1.
Author(s) : LOPEZ RIOS T., GUILLET S., LANCO P.
Type of article: Article
Summary
The electrical resistivity between 4 and 300 K of copper and silver films (several hundred angströms thick) grown at room temperature on silicon(100)2x1 surfaces is discussed. The resistivity of these samples has an abnormal temperature dependence due to an unexpected contribution of the silicon substrate.
Details
- Original title: Resistivité de couche minces de cuivre et d'argent sur silicium(100)2x1.
- Record ID : 1995-2716
- Languages: French
- Source: C. R. Acad. Sci., Sér. II - vol. 319 - n. 6
- Publication date: 1994/09/22
- Document available for consultation in the library of the IIR headquarters only.
Links
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Indexing
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